Limitations to the Norde I-V plotMCLEAN, A. B.Semiconductor science and technology. 1986, Vol 1, Num 3, pp 177-179, issn 0268-1242Article

Surface core-level shifts for the (110) cleavage face of III-V semiconductors : InAs(110)MCLEAN, A. B.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 4, pp 1027-1032, issn 0953-8984Article

The determination of contact temperature in microcontact spectroscopy = La détermination de la température de contact dans la spectroscopie de microcontactMCLEAN, A. B.Journal of physics. F. Metal physics. 1986, Vol 16, Num 10, pp L249-L253, issn 0305-4608Article

Rattling modes and the intrinsic vibrational spectrum of beetle-type scanning tunneling microscopesMIWA, J. A; MACLEOD, J. M; MOFFAT, Antje et al.Ultramicroscopy. 2003, Vol 98, Num 1, pp 43-49, issn 0304-3991, 7 p.Article

Sulfur passivated InP(100) : surface gaps and electron countingMITCHELL, C. E. J; HILL, I. G; MCLEAN, A. B et al.Applied surface science. 1996, Vol 104-05, pp 434-440, issn 0169-4332Conference Paper

Comment on: Lifetime broadening in angle-resolved photoemission. Author's replySTARNBERG, H. I; MCLEAN, A. B.Surface science. 1995, Vol 329, Num 3, pp L624-L631, issn 0039-6028Article

Fine structure of the Ca 2p x-ray-absorption edge for bulk compounds, surfaces, and interfacesHIMPSEL, F. J; KARLSSON, U. O; MCLEAN, A. B et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 9, pp 6899-6907, issn 0163-1829, 9 p.Article

Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopyHESKETT, D; TANG, D; MCLEAN, A. B et al.Applied surface science. 1991, Vol 48-49, pp 260-263, issn 0169-4332, 4 p.Conference Paper

Band dispersion of an interface state: CaF₂/Si(111)MCLEAN, A. B; HIMPSEL, F. J.Physical review. B, Condensed matter. 1989, Vol 39, Num 2, pp 1457-1460, issn 0163-1829Article

The electrical properties of Ga/nGaAs (110) interfacesMCLEAN, A. B; WILLIAMS, R. H.Semiconductor science and technology. 1987, Vol 2, Num 10, pp 654-660, issn 0268-1242Article

Nanolines on silicon surfacesMCLEAN, A. B; HILL, I. G; LIPTON-DUFFIN, J. A et al.International journal of nanotechnology. 2008, Vol 5, Num 9-12, pp 1018-1057, issn 1475-7435, 40 p.Article

Layer-by-layer electronic structure at semiconductor-metal interfaces : band gap and magnetismHIMPSEL, F. J; DRUBE, W; MCLEAN, A. B et al.Applied surface science. 1992, Vol 56-58, pp 160-168, issn 0169-4332, aConference Paper

Low pass filter for soft x-ray monochromatorsTERMINELLO, L. J; MCLEAN, A. B; SANTONI, A et al.Review of scientific instruments. 1990, Vol 61, Num 6, pp 1626-1628, issn 0034-6748Article

Temperature effects on the formation of the Sb/InP(110) interface = Effets de la température sur la formation de l'interface Sb/InP (110)ZAHN, D. R. T; RICHTER, W; MCLEAN, A. B et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 179-183, issn 0169-4332Conference Paper

Orientation of the O 2p holes in Bi₂Sr₂Ca₁Cu₂O₈HIMPSEL, F. J; CHANDRASHEKHAR, G. V; MCLEAN, A. B et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 16, pp 11946-11948, issn 0163-1829, BArticle

Thermal effects in aluminium-semiconductor interface formation = Effets thermiques dans la formation de l'interface aluminium-semiconducteurSTEPHENS, C; HUGHES, G. J; HORN, K et al.Vacuum. 1988, Vol 38, Num 4-5, pp 329-332, issn 0042-207XConference Paper

The presence of RNA complementary to HSV-2 (herpes simplex virus) DNA in cervical intraepithelial neoplasia after laser therapyEGLIN, R. P; KITCHENER, H. C; MCLEAN, A. B et al.British journal of obstetrics and gynaecology (Print). 1984, Vol 91, Num 3, pp 265-269, issn 0306-5456Article

X-ray standing wave study of wet-etch sulphur-treated InP(100) surfacesMCGOVERN, I. T; KOEBBEL, A; COWIE, B. C. C et al.Applied surface science. 2000, Vol 166, pp 196-200, issn 0169-4332Conference Paper

Structural and electronic properties of sulfur passivated InP(100)MITCHELL, C. E. J; HILL, I. G; MCLEAN, A. B et al.Progress in surface science. 1995, Vol 50, Num 1-4, pp 325-334, issn 0079-6816Conference Paper

Lifetime broadening in angle-resolved photoemissionMCLEAN, A. B; MITCHELL, C. E. J; HILL, I. G et al.Surface science. 1994, Vol 314, Num 3, pp L925-L930, issn 0039-6028Article

Polarization study of the p(1×1)- and p(1×2)-phases of Bi/GaSb(110) using linearly polarized synchrotron radiationMCILROY, D. N; HESKETT, D; MCLEAN, A. B et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 4, pp 1486-1491, issn 1071-1023Conference Paper

Strain and the two-dimensional electronic structure of monolayers of Bi/InAs(110) and Bi/GaAs(110)HESKETT, D; MCIIROY, D; SWANSTON, D. M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1949-1952, issn 0734-211XConference Paper

Electronic structure of Si(111)-B(√3×√3)R30° studied by Si 2p and B 1s core-level photoelectron spectroscopyMCLEAN, A. B; TERMINELLO, L. J; HIMPSEL, F. J et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 11, pp 7694-7700, issn 0163-1829Article

Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)MCLEAN, A. B; TERMINELLO, L. J; MCFEELY, F. R et al.Physical review. B, Condensed matter. 1990, Vol 40, Num 17, pp 11778-11785, issn 0163-1829, 8 p.Article

Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interfaceMCLEAN, A. B; HIMPSEL, F. J.Physical review. B, Condensed matter. 1989, Vol 40, Num 12, pp 8425-8430, issn 0163-1829Article